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Intense wide-band photoluminescence (PL) was observed at room temperature from both SiC thin films grown on silicon substrates by hot-filament chemical vapor deposition and anodized SiC thin films formed by electrochemical anodization in HF–ethanol solution. It was found that prolonged irradiation with ultraviolet light from a He–Cd laser (325 nm, 10 mW) generally enhanced the PL intensity of as-grown SiC but induced a new PL band in anodized SiC at room temperature. The light-induced PL emission in anodized SiC was centered at the energy between 2.1 and 2.2 eV in comparison with the initial peak position of about 1.9 eV. These effects were also temperature dependent. © 1999 American Institute of Physics.
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