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Differential gain and threshold current of 1.3 μm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth

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7 Author(s)
Itoh, M. ; NTT Opto-Electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-01, Japan ; Sugiura, Hideo ; Yasaka, H. ; Kondo, Y.
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