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The Schottky barrier heights of Au/In1-xGaxAs1-yPy contacts have been determined as a function of y by the capacitance–voltage and temperature dependent current–voltage characteristics measurements. The barrier height is observed to increase as y is increased for both n- and p-type materials, with a more rapid increase for the p-type material. The compositional variation of the barrier heights for Au/n-In1-xGaxAs1-yPy is found to be identical to that of the conduction-band offsets in In1-xGaxAs1-yPy/GaAs heterojunctions. A possible cause of this phenomenon is also discussed. © 1997 American Institute of Physics.
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