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click on this link:http://dx.doi.org/+10.1063/1.1639936
We present photon counting experiments with a single-photon detector based on a field-effect transistor gated by a layer of InAs quantum dots. A cryogenic radio-frequency amplifier is used to convert the photon-induced steps in the source-drain current of the transistor into voltage peaks. We measure a maximum photon detection efficiency of 0.14%, corresponding to internal quantum efficiency of 10%. The dark count rate is less than 10-8 ns-1 when the efficiency is 0.045%. © 2004 American Institute of Physics.
Applied Physics Letters
Date of Publication:
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