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ZnO films were grown on low-temperature (LT) buffer layers on sapphire a-plane (11–20) substrates by radical source molecular-beam epitaxy. The LT buffer layers were found to effect the electrical properties of subsequently grown undoped ZnO films, and their presence was found to be indispensable for the growth of films with low carrier concentrations and high mobilities. Temperature-dependent Hall measurements showed the existence of a degenerate region related to the LT buffer layers. It was found that the effects of degenerate layers could be reduced by using annealing treatments and nitrogen doping of the LT buffer layers. The dominant residual donor energy of 110 meV was found to be different than previously reported. The carrier concentration of a ZnO film fabricated using a nitrogen-doped buffer layer was 7.5×1016 cm-3 with a mobility of 132 cm2/V s at room temperature. © 2004 American Institute of Physics.
Applied Physics Letters
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