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Whereas laser emission at 1.55 μm is difficult to realize using type-I InGaAsN quantum wells grown on GaAs, we show that it can be achieved with far fewer restrictions on the growth by employing type-II (In)GaAsN/GaAsSb/(In)GaAsN/GaAs structures having a “W” band alignment. We use a 10-band k∙p formalism that accounts for the N band anticrossing to calculate the gain and spontaneous-emission characteristics of “W” structures optimized for maximum overlap of the electron and hole wave functions. We estimate that one to three wells would be necessary for edge emitters with moderate cavity losses and nonradiative recombination rates, and a somewhat larger number of wells may be required for vertical-cavity surface emitters. © 2003 American Institute of Physics.
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