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MgxZn1-xO (0≪x≪0.33) thin films were grown on R-plane (011¯2) sapphire substrate by metalorganic chemical vapor deposition. It was found that a thin ZnO buffer layer with a minimum thickness of ∼50 Å is needed to achieve wurtzite-type MgxZn1-xO films on R-plane sapphire. The x-ray Δω(112¯0) rocking curve and Δ2θ(112¯0) full width at half maximum for Mg0.18Zn0.82O film were measured to be 0.275° and 0.18°, respectively, indicating strong mosaicity and strain in the films. In-plane reflections show the lower lattice mismatch along the c axis of the MgxZn1-xO films on R-plane sapphire. Optical transmission spectra indicate the good quality of the films. © 2003 American Institute of Physics.
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