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Effects of 6H-SiC surface reconstruction on lattice relaxation of AlN buffer layers in molecular-beam epitaxial growth of GaN

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6 Author(s)
Suda, J. ; Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan ; Miura, Kouhei ; Honaga, Misako ; Nishi, Yusuke
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