By Topic

Improvement of GaAs crystal quality grown on Si by metalorganic chemical vapor deposition through two‐dimensional‐like nucleation with an in situ H2/AsH3 plasma cleaning at 450 °C

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Yoon, Euijoon ; Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 ; Reif, Rafael