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Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering

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8 Author(s)
Nakashima, S. ; National Institute of Advanced Industrial Science and Technology, Energy Semiconductor Electronics Research Laboratory, 1-1-1, Tsukuba, Ibaraki 305-8567, Japan ; Kitamura, T. ; Kato, T. ; Kojima, K.
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