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Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

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6 Author(s)
Fu, L. ; Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra 0200, Australia ; McKerracher, I. ; Tan, H.H. ; Jagadish, C.
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