By Topic

Surface-morphology evolution and strain relaxation during heteroepitaxial growth of GaN films without low-temperature nucleation layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
10 Author(s)
Lee, Sanghwa ; Department of Physics, Kyunghee University, 1 Hoegi-dong, Dongdaemoon-gu, Seoul 130-701, Korea and Research Institute for Basic Sciences, Kyunghee University, 1 Hoegi-dong, Dongdaemoon-gu, Seoul 130-701, Korea ; Choe, Hyeokmin ; Oh, Taegeon ; Jean, Jai Weon
more authors