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High-Performance 0.1- \mu\hbox {m} Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz

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4 Author(s)
Haifeng Sun ; IfH, THz Electron. Group, ETH Zurich, Zurich ; Andreas R. Alt ; Hansruedi Benedickter ; C. R. Bolognesi