In this paper, we present a novel magnetic content addressable memory (MCAM) cell design. The proposed MCAM cell consists of a magnetic tunneling junction (MTJ), where both magnets are programmable. The synthetic antiferromagnetic (SAF) structure is used for the top magnet of MTJ, which can be programmed in toggle mode by externally applied field. The bottom MTJ magnet is programmed by the magnetic fringe field from a programming line underneath the bottom magnet. The domain wall motion in the programming line is driven by the spin-polarized current. The feasibility of the proposed operation has been demonstrated by numerical micromagnetic simulation. The simulation results show a 2times margins on both top and bottom magnets programming field/current in the proposed planar MCAM cell design.