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AlGaN/GaN MOS-HEMT With \hbox {HfO}_{2} Dielectric and \hbox {Al}_{2}\hbox {O}_{3} Interfacial Passivation Layer Grown by Atomic Layer Deposition

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7 Author(s)
Yuanzheng Yue ; Sch. of Microelectron., Xidian Univ., Xi'an ; Yue Hao ; Jincheng Zhang ; Jinyu Ni
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