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Realization of Silicon-Germanium-Tin (SiGeSn) Source/Drain Stressors by Sn implant and Solid Phase Epitaxy for strain engineering in SiGe channel P-MOSFETs

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9 Author(s)
Wang, Grace Huiqi ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore ; Toh, Eng-Huat ; Chan, Taw Kuei ; Osipowicz, T.
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