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Surface Passivation Effect of Electron-Beam Resist on InAs Quantum Dots and Their Improved Luminescence Efficiency

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5 Author(s)
Y. Idutsu ; Research Institute for Electronic Science, Hokkaido University, Kita-21, Nishi-10, Sapporo 001-0022, Japan; Japan Science and Technology Corporation (CREST), Saitama 332-0012, Japan ; Y. Hayashi ; M. Endo ; K. Uesugi
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