This paper describes the modeling, design, and fabrication of quarter-micrometer double delta-doped AlGaAs/InGaAs charge-coupled devices (CCDs) whose epitaxial layers and geometry were based around the device structure of commercial pHEMTs. A quasi-2-D physical model has been developed to investigate the properties of this novel 2-D electron gas CCD. This physical model allows the characteristics of the InGaAs transport channel as well as the dc characteristics of the device to be predicted within a reasonable amount of time. This model also shows how "individual" charge packets can be controllably transferred through the device when appropriate clocking voltages are applied to the gates of the CCD. This capacitive gate structure device is then shown to be successfully fabricated using established GaAs heterostructure fabrication techniques to ensure good repeatability. The dc characteristics of the fabricated CCD delay line are included.