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Improved Ge Surface Passivation With Ultrathin SiOX Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate Stack

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13 Author(s)
Sachin Joshi ; Microelectron. Res. Center, Univ. of Texas, Austin, TX ; Cristiano Krug ; Dawei Heh ; Hoon Joo Na
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