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Band to Band Tunneling limited Off state Current in Ultra-thin Body Double Gate FETs with High Mobility Materials : III-V, Ge and strained Si/Ge

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4 Author(s)
Donghyun Kim ; Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA. ; Tejas Krishnamohan ; Yoshio Nishi ; Krishna C. Saraswat