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Submilliampere-threshold InGaAs-GaAs quantum-well ridge-waveguide lasers with lateral confinement provided by impurity-induced disordering

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5 Author(s)
Hu, S.Y. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Peters, M.G. ; Young, D.B. ; Gossard, A.C.
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