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High-performance Al-free In0.75Ga0.25P/InP/In xGa1-xAs/InP (x⩾53%) backside-doped split-channel HFETs with 0.25 μm T-gates

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7 Author(s)
Mesquida Kusters, A. ; Inst. fur Halbleitertechnik, Tech. Hochschule Aachen, Germany ; Puls, C. ; Wuller, R. ; Behres, A.
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