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A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability

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8 Author(s)
Zamdmer, N. ; Dev. Center, IBM Semicond. Res., Hopewell Junction, NY, USA ; Jonghae Kim ; Trzcinski, R. ; Plouchart, J.-O.
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