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High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

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4 Author(s)
D. S. Ang ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore ; T. W. H. Phua ; H. Liao ; C. H. Ling