A metal-insulator-semiconductor (MIS) sandwich structure is proposed for use as a pulsed laser. A theoretical analysis relating to the feasibility of the MIS pulsed laser structure is presented. The field distribution and allowable TE and TM modes in the optical cavity are calculated using techniques of Anderson and Butler. The three MIS structures detailed are chosen to correspond as closely as possible to junction laser geometrics of Kressel and Hawrylo, and Hayashi et al., where precise lasing thresholds are published. Realization of the MIS laser will require improved process control of surface states for 1) low Qssand 2) minimum charge injection into the gate dielectric.