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Characteristics of magnetic-domain device (MDD) and charge-transfer device (CTD) memory modules which appear technically feasible and desirable for use in computer applications are derived. The possible uses of these memories in the memory and storage subsystems of computers are discussed. The concept and measures of performance of memory hierarchies is outlined and possible improvements by incorporation of MDD and/or CTD memories in hierarchies employing conventional memories are addressed. A scheme comprising two hierarchy levels on the same chip is evaluated by using the derived performance measures.