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Improved hot-electron reliability in high-performance, multilevel-metal CMOS using deuterated barrier-nitride processing

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5 Author(s)
Clark, W.F. ; IBM Microelectron. Div., Essex Junction, VT, USA ; Ference, T.G. ; Mittl, S.W. ; Burnham, J.S.
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Author(s)

Clark, W.F.
IBM Microelectron. Div., Essex Junction, VT, USA
Ference, T.G. ; Mittl, S.W. ; Burnham, J.S. ; Adams, E.D.

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