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Electrical characterization of junctions and bipolar transistors formed with in situ doped low-temperature (800°C) epitaxial silicon

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3 Author(s)
Ohi, S. ; MIT, Cambridge, MA, USA ; Burger, R. ; Reif, Rafael

Author(s)

Ohi, S.
MIT, Cambridge, MA, USA
Burger, R. ; Reif, Rafael