TiO2 memristor devices may be a promising candidate for radiation hardened next-generation memories. They have been shown to be tolerant to both gamma radiation and alpha particles. In this work, we expand on the radiation studies previously done and measure the response of a large number of TiO2 memristor test devices to both neutrons and protons. We also use simulations to estimate the amount of damage done for each type and level of radiation and correlate the number of displacements to the experimentally measured current-voltage characteristics of the devices. We show that the TiO2 thin films are tolerant to high fluences of both neutrons and protons.