By Topic

Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Qian Zhou ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore ; Shao-Ming Koh ; Thanigaivelan, T. ; Henry, T.
more authors

Author(s)

Qian Zhou
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Shao-Ming Koh ; Thanigaivelan, T. ; Henry, T. ; Yee-Chia Yeo