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Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

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3 Author(s)
Yota, Jiro ; Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320 ; Shen, Hong ; Ramanathan, Ravi

Author(s)

Yota, Jiro
Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320
Shen, Hong ; Ramanathan, Ravi