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Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD

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3 Author(s)
Tongde Huang ; Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong ; Xueliang Zhu ; Kei May Lau

Author(s)

Tongde Huang
Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong
Xueliang Zhu ; Kei May Lau