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ZnO-Based n-Channel Junction Field-Effect Transistor With Room-Temperature-Fabricated Amorphous p-Type \hbox {ZnCo}_{2}\hbox {O}_{4} Gate

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4 Author(s)
Friedrich-Leonhard Schein ; Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Universität Leipzig, Leipzig, Germany ; Holger von Wenckstern ; Heiko Frenzel ; Marius Grundmann

Author(s)

Friedrich-Leonhard Schein
Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Universität Leipzig, Leipzig, Germany
Holger von Wenckstern ; Heiko Frenzel ; Marius Grundmann