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Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1101) semipolar GaN

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9 Author(s)
Wu, Z. H. ; Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China ; Tanikawa, T. ; Murase, T. ; Fang, Y.-Y.
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Author(s)

Wu, Z. H.
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China
Tanikawa, T. ; Murase, T. ; Fang, Y.-Y. ; Chen, C. Q. ; Honda, Y. ; Yamaguchi, M. ; Amano, H. ; Sawaki, N.