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Proposal and Performance Analysis of Normally Off  \hbox {n}^{++} GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

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19 Author(s)
Jan Kuzmik ; Institute for Solid State Electronics, Vienna University of Technology, Vienna, Austria ; Clemens Ostermaier ; G. Pozzovivo ; Bernhard Basnar
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