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Correlation between carrier localization, optical, and structural properties in multilayered GaN/Al0.5Ga0.5N quantum wells with an ultrathin inserted Al0.5Ga0.5N layer

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3 Author(s)
Park, Young S ; Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea ; Kim, Yongmin ; Im, Hyunsik

Author(s)

Park, Young S
Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea
Kim, Yongmin ; Im, Hyunsik

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