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Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

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5 Author(s)
Marukame, Takao ; Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan ; Inokuchi, T. ; Ishikawa, M. ; Sugiyama, H.
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Author(s)

Marukame, Takao
Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan
Inokuchi, T. ; Ishikawa, M. ; Sugiyama, H. ; Saito, Y.