Experimental transistors designed to operate above 1000 Mc are described and measurements of their electrical parameters discussed. The design is a diffused-base drift transistor structure with minimized bulk resistances and junction capacitances. Measurements of the short-circuit current gain (−h21p) with both emitter and collector reverse-biased, indicated that the passive circuit comprising extrinsic parameters only could produce a gain greater than unity. Interpretation of measurements using a simplified equivalent circuit shows that reduction of bulk resistances leads to an appreciable passive or feed-through current. An oscillator is described in which the transistors operated up to 1550 Mc.
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