A mathematical analysis is presented on the measurement of an impurity atom distribution in silicon by the differential capacitance technique. This analysis shows some inherent errors that can arise when the technique is applied to material containing a small impurity atom density. An important conclusion is that the differential capacitance measurement establishes the distribution of majority carriers, rather than the distribution of impurity atoms; therefore this measurement technique is applicable only in regions of semiconductor material exhibiting charge neutrality.
Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.