A statistical model incorporating the effects of defects provides a good representation of breakdown results for Al-SiO2-Si MOS capacitors. Implications of this model for interpretation of the yield from life tests and histograms obtained from ramp tests are discussed for the case of a Poisson distribution of defects over the capacitors. The breakdown rates of MOS capacitors in life tests are found to be correlated to defects inferred from conduction measurements.
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