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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an \hbox {Al}_{2}\hbox {O}_{3}/\hbox {SiN}_{x} Dielectric Layer

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8 Author(s)
Donghyun Kim ; Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA ; Kumar, V. ; Jaesun Lee ; Minjun Yan
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Author(s)

Donghyun Kim
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Kumar, V. ; Jaesun Lee ; Minjun Yan ; Dabiran, A.M. ; Wowchak, A.M. ; Chow, Peter P. ; Adesida, Ilesanmi