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We report the growth mechanism of GaAs on vicinal Si(110) substrates by molecular beam epitaxy, and investigate the effects of off‐angle and ‐direction on the crystalline quality of grown films. The quality was improved with the increase of the off‐angle and strongly influenced by the off‐direction. Off‐direction toward the  was better than that toward the [11¯0] for obtaining high‐quality films. The cause is related to the structure and density of the steps. We infer from reflection high‐energy electron diffraction results that GaAs films on vicinal Si(110) with off‐angles above 2° toward the  direction grew up to a thickness of 3 nm in step‐flow‐like mode. The spotty reflection high‐energy electron diffraction patterns characteristic of three‐dimensional growth in GaAs/Si(100) were not observed at a thickness above 3 nm. © 1994 American Institute of Physics.
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