Electromigration-induced damage has been an important concern in very large scale integrated circuit design for a long time and will be a major road block in the pursuit of nanoelectronics devices and next generation power electronics. In this letter, the failure mechanism analysis on two-terminal TiSi2 nanowire devices was reported. Electromigration dominant mass migration is observed and verified by energy dispersive spectroscopy. The contribution of thermomigration is discussed based on temperature simulation. This work provides useful reference for future devices and the failure analysis on nanostructures.