This paper reports on the Hall characterization of narrow‐gap p‐type Hg1-xCdxTe epilayers grown by liquid‐phase epitaxy. The characterization couples variable magnetic field (0.5–10 kG) and temperature (from 15 to 300 K) data with an analysis procedure which includes n‐type conducting regions in the p‐type material. It is shown that the analysis of the magnetic field dependence of the Hall coefficient is a useful tool to study the anomalous electrical properties in p‐type Hg1-xCdxTe . The analysis, which is rather simple, yields consistent and meaningful results, and in some cases permits determination of the concentration of holes (in the p‐type material) and electrons (in the n‐type regions) and their mobilities. Although there is strong evidence that the n‐type conducting regions are located at the surface of the Hg1-xCdxTe samples, the possibility that in some cases the n‐type regions could be located within the material bulk or near the Hg1-xCdxTe substrate interface cannot be excluded.