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Impact of the Ge Content on the Bandgap-Narrowing Induced Leakage Current of Recessed \hbox {Si}_{1 - x}\hbox {Ge}_{x} Source/Drain Junctions

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6 Author(s)
Gonzalez, M.B. ; Interuniversity Microelectron. Center, Leuven ; Simoen, E. ; Vissouvanadin, B. ; Verheyen, P.
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Gonzalez, M.B.
Interuniversity Microelectron. Center, Leuven
Simoen, E. ; Vissouvanadin, B. ; Verheyen, P. ; Loo, R. ; Claeys, C.

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