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We have studied the hydrostatic pressure dependence of Ge nanocrystals embedded into SiO2 matrix on quartz-glass substrate by Raman scattering at room temperature. The pressure coefficient (dω/dP=0.77 cm-1 kbar-1) obtained for the Ge–Ge mode in the nanocrystals is found to be almost twice as large compared with its corresponding bulk value (dω/dP=0.39 cm-1 kbar-1). We explained our results using a simple elastic model, which describes the effective pressure transmitted from the matrix to the nanocrystals. © 2003 American Institute of Physics.
Journal of Applied Physics
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