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Investigation of the Suitability of 1200-V Normally-Off Recessed-Implanted-Gate SiC VJFETs for Efficient Power-Switching Applications

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9 Author(s)
Victor Veliadis ; Northrop Grumman Adv. Technol. Lab., Linthicum, MD ; Harold Hearne ; Eric J. Stewart ; H. C. Ha
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