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Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates

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4 Author(s)
Ahmad, I. ; Department of Physics and NanoTech Center, Texas Tech University, Lubbock, Texas 79409 ; Holtz, M. ; Faleev, N.N. ; Temkin, H.

Author(s)

Ahmad, I.
Department of Physics and NanoTech Center, Texas Tech University, Lubbock, Texas 79409
Holtz, M. ; Faleev, N.N. ; Temkin, H.

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