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Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure

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5 Author(s)
Pejnefors, J. ; Department of Electronics, Royal Institute of Technology (KTH), Box E229, SE-164 40 Kista, Sweden ; Zhang, S.‐L. ; Radamson, H.H. ; Grahn, J.V.
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Author(s)

Pejnefors, J.
Department of Electronics, Royal Institute of Technology (KTH), Box E229, SE-164 40 Kista, Sweden
Zhang, S.‐L. ; Radamson, H.H. ; Grahn, J.V. ; Ostling, M.