Skip to Main Content
IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards,
eBooks, and eLearning courses.
Learn more about:
IEEE Xplore subscriptions
Your organization might have access to this article on the publisher's site. To check,
click on this link:http://dx.doi.org/+10.1063/1.1314899
We have carried out the time, temperature, and illumination dependencies of the current density in a semi-insulating GaAs sample grown at 300 °C under strong electric field. Standard ohmic behavior was observed at room temperature. A negative differential behavior as a function of the applied electric field was observed by lowering the temperature and increasing the photon flux, and this phenomenon was associated to the field-enhanced trapping effect. We have fit our data with a model for enhanced capture by a multiple-phonon emission capture process assisted by the applied electrical field. © 2000 American Institute of Physics.
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.